| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer semiconductor ceramic device which can be calcined at <=1000 deg.C and which can develop enough PTC characteristics even when the device is subjected to re-oxidation treatment at a low temp. SOLUTION: This multilayer semiconductor ceramic device 1 consists of a multilayer sintered body 3 in which semiconductor ceramic layers 5 and inner electrode layers 7 are alternately stacked, and outer electrodes 9 formed on the sintered body 3. The semiconductor ceramic layers 5 contain at least boron oxide and an oxide comprising at least one kind selected from barium, strontium, calcium, lead, yttrium and rare earth elements in a barium titanate-based semiconductor sintered body. These oxides are incorporated in such a manner that the atomic ratio of the boron element (B) in the boron oxide satisfies 0.001<=B/β<=0.50 and 0.5<=B/(α-β)<=10.0, wherein α is the total amt. of barium, strontium, calcium, lead, yttrium and rare earth elements in the semiconductor ceramic material, and β is the total amt. of titanium, tin, zirconium, niobium, tungsten and antimony in the semiconductor ceramic material. |
