Method for forming an integrated trench capacitor

摘要

A shallow trench capacitor is disclosed that is fabricated by forming a shallow trench in a substrate extending below a surface of the substrate. A dielectric layer having a preselected thickness is grown in the shallow trench, and a polysilicon layer is deposited over the dielectric layer. The polysilicon layer is then planarized down to the nitride or pad layer forming a capacitor. By utilizing a non-critical mask to open up selected regions, isolation structures may then be formed through shallow trench technology.