| 摘要 |
A sense amplifier for detecting a logic state of a memory cell includes a voltage amplifier, a current mirror, and a feedback circuit. The voltage amplifier couples to the memory cell and the current mirror. The feedback circuit couples to the current mirror and an input of the sense amplifier. The feedback circuit can be implemented with a transistor, a switch, a transmission gate, or the like. The feedback circuit is selectively enabled to quickly charge or discharge the voltage at the input of the sense amplifier to a trip voltage of the sense amplifier. Whether charging or discharging is performed is dependent on the voltage then existing at the input node. The amount of charging and discharging current can also be based on other circuit considerations, such as the required charge time, and so on. When the voltage at the input reaches a predetermined voltage range, the feedback circuit is disabled.
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