Method of contacting a silicide-based schottky diode
摘要
A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.
申请公布号
US6121122(A)
申请公布日期
2000.09.19
申请号
US19990312945
申请日期
1999.05.17
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
DUNN, JAMES STUART;GRAY, PETER BRIAN;KIEFT, III, KENNETH KNETCH;SCHMIDT, NICHOLAS THEODORE;ST. ONGE, STEPHEN