发明名称 |
Plasma etch system |
摘要 |
This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.
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申请公布号 |
US6120610(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19990412873 |
申请日期 |
1999.10.05 |
申请人 |
TEGAL CORPORATION |
发明人 |
LEIBOVICH, VLADIMIR E.;ZUCKER, MARTIN L. |
分类号 |
H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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