| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
In the BGA in which the bonding portions of the support frame bonded to the wiring substrate via adhesive layer are molded by a resin, the areas of the bonding portions are each selected to be from 0.5 to 3.1 mm2. Furthermore, holes are formed in the substrate under the frame corresponding to the bonding portions.
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| 申请公布号 |
US6120301(A) |
申请公布日期 |
2000.09.19 |
| 申请号 |
US19960686503 |
申请日期 |
1996.07.24 |
| 申请人 |
HITACHI, LTD. |
发明人 |
ICHITANI, MASAHIRO;HARUTA, RYO;MATSUMOTO, KATSUYUKI;KINJYO, ARATA;KAKIMOTO, TSUTOMU |
| 分类号 |
H01L23/28;H01L21/56;H01L23/12;H01L23/31;H01L23/498;(IPC1-7):H01L21/20 |
主分类号 |
H01L23/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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