| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper plating method on a wafer in which a plating solution is less in pollution, the disturbance of current distribution is not caused by the change in shape of an anode surface, and which uses an anode less in oxidizing decomposition of an additive. SOLUTION: The electroplating is achieved using a solution containing copper ion and an electrode provided with a covering mainly consisting of iridium oxide in a corrosion resistant metal base as an anode, and a wafer as a cathode. The anode is preferably an insoluble electrode provided with a covering formed of iridium oxide and a metal or a metal oxide selected among platinum, tantalum, titanium and niobium, and a neutral membrane or an ion-exchange membrane is preferably provided between the anode and the cathode.
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