| 摘要 |
PURPOSE: A flash memory is provided to reduce a testing time of the flash memory before shipping the memory by activating a testing mode to sequentially activate block selecting signals, to read contents of a mask read only memory(ROM) cell column, and by comparing the contents with an expected value to test fragments of a wiring of an address signal. CONSTITUTION: A flash memory has mask read only memory(ROM) cell columns on memory blocks(10-17). Different values are stored in the mask ROM cell columns. Mask ROM cell column selecting circuits(50-57) turn on transmission gates of mask ROM cells of the memory blocks corresponding to the block selecting signals, when test mode signals(*TMs) and the block selecting signals are activated. A word line selecting signal is inactivated when the test mode signals are activated. The block selecting signals are sequentially activated by activating test modes, and contents of the mask ROM cell columns are read. The contents are compared with an expected value to test fragments of a wiring of an address signal.
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