| 摘要 |
PURPOSE: A chemically amplified photoresist is provided to attain improved thermal stability, stiffness, resolution, storage stability, sensitivity to radioactive rays such as far ultraviolet rays or KrF excimer laser, and excellent resist patterns regardless of a kind of substrate employed. CONSTITUTION: The chemically amplified amphoteric photoresist is comprised of styrene-acryl copolymer as a repeating unit, a photoacid generator and an organic solvent, where the styrene-acryl copolymer having an average polystyrene conversion molecular weight of 1,000-1,000,000 and formula 1 (wherein R1, R2 and R3 are hydrogen or methyl, respectively; R4 and R6 are hydrogen, alkyl, alkoxy, alkoxycarbonyl, and halogen, respectively; l, m and n are an indicating number of a repeating unit, such as, l from 0.1 to 0.9, m from 0.1 to 0.6, and n from 0 to 0.5; and R5 is alkyl, vinyl, aryl or phenyl).
|
