| 摘要 |
PURPOSE: A semiconductor laser chip is provided to control precisely the configuration, depths and doping during the vapor deposition of the chip, to improve reliability by decreasing heat conductivity, and to increase the effective potential barrier height. CONSTITUTION: In the semiconductor laser chip, a Al(x)Ga(1-x)As buffer layer(90) is formed on an N(+)-GaAs substrate(10). A laser oscillating layer of LnGaP, GaAllnP and AlGaAs having a hetero structure of a multi-quantum barrier. In detail, the laser oscillating layer includes a first lower clad layer of n-Al0.75Ga0.25As(100), a second lower clad layer of n-GaAllnP(3), an active layer of LnGaP(40), a first higher clad layer of p-GaAllnP(50), a multi-quantum barrier layer of AlAs/GaAs(110) and a contact layer of P(+)-GaAs(80). Each layer is deposed through MOCVD or MBE methods.
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