| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory is provided to reduce a manufacturing cost and to increase an integration degree, by omitting the process to form a well and a field oxidation layer. CONSTITUTION: A method for manufacturing a semiconductor memory comprises the steps of: forming an insulation layer on a substrate, and forming an oxidation layer pattern to partially have a step difference on the insulation layer; evaporating a polycrystalline silicon and a gate oxidation layer on the entire surface of the oxidation layer pattern and the insulation layer; forming a gate on the gate oxidation layer existing on the oxidation layer pattern; ion-injecting an impurity ion into the polycrystalline silicon on a side surface of the gate to form a source and a drain; etching a part of the polycrystalline silicon to form an isolation region, and forming a capacitor connected to the drain to evaporate/pattern a dielectric layer and a polycrystalline silicon on the source and drain; and evaporating an oxidation layer on the entire surface of the capacitor and the gate, forming a contact hole on the oxidation layer to expose the source, and forming a bit line connected to the source.
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