METHOD FOR FORMING BARRIER METAL LAYER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier metal layer is to prevent a cracking of a Ti layer, which serves as the barrier metal layer for preventing interdiffusion between a silicon substrate and an aluminum interconnect, thereby improving reliability of a semiconductor device. CONSTITUTION: An interlayer dielectric(11) is formed to cover a lower structure of a semiconductor substrate(10). The interlayer dielectric is selectively etched to form a contact hole(12) for exposing the silicon substrate. A Ti layer(13) is deposited on the silicon substrate through the contact hole. The silicon substrate is cooled to a temperature of 0 to 23 deg.C. A TiN layer(14) is deposited on the Ti layer. The Ti layer and the TiN layer are deposited by a sputtering process. The Ti layer is formed in thickness of 300 to 500 angstroms. The TiN layer is formed in thickness of 700 to 1000 angstrom. The Ti layer and the TiN layer are formed in temperature of 300 deg.C.