发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERKÖRPERS |
摘要 |
A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process. <IMAGE> |
申请公布号 |
AT195610(T) |
申请公布日期 |
2000.09.15 |
申请号 |
AT19920304605T |
申请日期 |
1992.05.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI.;YONEHARA, TAKAO. |
分类号 |
H01L21/02;H01L21/20;H01L21/306;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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