METHOD OF FORMING HSG THIN FILMS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an HSG(hemispherical silicon grain) thin film is to reduce contamination particles and defects by simplifying the formation process of the HSG thin film, and improve the reliability of a capacitor by uniformly forming the uneven structure of the HSG thin film. CONSTITUTION: A silicon oxide layer(20) and an amorphous silicon layer are formed in this order on a semiconductor substrate(10) at a predetermined thickness. A predetermined electrode pattern is formed by etching the thin film of the amorphous silicon layer. An uncoupled silicon atom is changed into a hydrogen terminated silicon atom by moving a hydrogen gas into the surface of the amorphous silicon layer formed in an electrode pattern. A silicon seed is formed only on the surface of the amorphous silicon layer by moving a silicon source gas into the resultant structure. An HSG thin film(70) is formed only on the surface of the amorphous silicon layer by forming the HSG thin film on the basis of the silicon seed.