A METHOD OF MANUFACTURING VOLCANO TYPED FIELD EMISSION DEVICE WITH SUBMICRON GATE APERTURE

摘要

PURPOSE: A method for manufacturing a field emission display device of a volcano shape having a submicron gate aperture is provided to perform a field emitting function in low voltage by reducing an interval between an emitter electrode and a gate electrode. CONSTITUTION: The first oxide layer(12) and a nitride layer(13) are formed on a silicon substrate(11). The first oxide layer(12) and a nitride layer(13) are etched. A sharp emitter tip(14) is formed by depositing and etching polysilicon thereon. A gate electrode(16) is formed by depositing the second oxide layer(15) and a metal. A photoresist is applied thereon. The gate electrode(16) and the second oxide layer(15) are etched. The sharp emitter tip(14) is exposed by etching the nitride layer(13).