APPARATUS FOR ETCHING SEMICONDUCTOR USING GAS DISTRIBUTION PLATE

摘要

PURPOSE: An apparatus for etching a semiconductor is provided to have an etching layer maintain a uniform layer of no step difference by using a gas distribution plate having grooves with different intervals or grooves with different diameters, so that a gas distribution volume can be controlled according to a state of application of the layer to etch. CONSTITUTION: In an apparatus for etching a semiconductor using a gas distribution plate(34) having a plurality of grooves(34h) in which a gas distributed through the grooves is accelerated to a layer to etch on a wafer in a plasma state, the grooves in the gas distribution plate have different intervals between the grooves or different diameters of the grooves, so that different volume of gas is distributed according to the state of the layer to etch.