发明名称 |
SEMICONDUCTOR LASER DIODE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor laser diode is provided to prevent the spread of carriers in a lateral direction of a laser diode by constructing that a composition ratio of Al of a current limit layer is larger than that of cladding layer. CONSTITUTION: A substrate(101) is located on a lowest portion of a device. A first n-type GaN layer(102) is formed on the upper surface of the substrate(101). An n-type AlxGa1-xN cladding layer(103) is formed on the upper surface of the first n-type GaN layer(102). A second n-type GaN layer(104) is formed on approximate center portion of the upper surface of the n-type AlxGa1-xN layer(103) in a ridge strife of a predetermined width. An active layer(105) is formed on the upper surface of the second p-type GaN layer(106) in the same ridge strife as the second n-type GaN layer(104).
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申请公布号 |
KR20000055917(A) |
申请公布日期 |
2000.09.15 |
申请号 |
KR19990004825 |
申请日期 |
1999.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BONG JIN |
分类号 |
H01S5/30;(IPC1-7):H01S5/30 |
主分类号 |
H01S5/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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