| 摘要 |
<p>A method of manufacturing a semiconductor device is provided superior in planarization, crack resistance, and moisture resistance, and with no corrosion in wiring while the manufacturing cost is suppressed without increasing the number of manufacturing steps in forming an interlayer film therein. This method includes the step of forming a silicon oxide film on a substrate so as to cover a first wiring formed with a silicon oxide film therebetween. A thick-film inorganic SOG film is coated on the silicon oxide film, and then a thermal treatment is applied. Next, a silicon oxide film is formed, and a via hole is formed according to a predetermined mask. By carrying out a thermal treatment at the temperature of 150 DIFFERENCE 550 DEG C. and at the pressure of not more than 10-3 Torr with a portion of the thick-film inorganic SOG film exposed at a side surface of the via hole, residual gas such as CO2, and H2O adsorbed to the side surface of the via hole is released. Thus, corrosion of a wiring that is subsequently formed will be prevented to obtain a semiconductor device of high reliability.</p> |
