| 摘要 |
PURPOSE: An active matrix liquid crystal display is provided to an active matrix type liquid crystal display having no opposed-electrode-wiring of the horizontal electric field method, in which the difference of threshold voltages are reduced, thin film transistors with simple structure are used, and the picture resolution is improved. CONSTITUTION: A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed on the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed on the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 ANGSTROM or more
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