OUTPUT END PULL DOWN DRIVER OF SEMICONDUCTOR DEVICE FOR LOW POWER VOLTAGE

摘要

PURPOSE: Output end pull down driver of semiconductor device for low power voltage provides available interface without problems with a high voltage applied on a drainage of a NMOS transistor when a maximum available voltage is decreased on a PN junction between a drainage and a bulk of the NMOS transistor of output end. CONSTITUTION: Output end pull down driver of semiconductor device for low power voltage comprises; a pull down driver(211) is mounted on a output end; the pull down driver(211) is comprising a 1st, 2nd NMOS transistors(221,222), a pad(231) is connected on the pull down driver(211). The semiconductor device(201) gives and takes the signals with outer system through the pad(231). The drainage(D1) of the 1st NMOS transistor(221) connected on the pad(231). The inner power voltage(VDD) is applied on a gate(G1) of the 1st NMOS transistor(221). A source(S1) and bulk(B1) of the 1st NMOS transistor(221) are connected electrically. The drainage of 2nd NMOS transistor(222) is connected on the source(S1) of the 1st NMOS transistor(221), a output signal(P1) is applied on a gate of 2nd NMOS transistors(222). A ground voltage(VSS) of device(201) is applied on the source and bulk of 2nd NMOS transistors(222).