| 摘要 |
PURPOSE: A circuit for controlling signals of a semiconductor storage is provided to prevent error data caused by noises, outputted from changes of a power electric potential when a sense amplifier senses data, without changing signal levels outputted from an output buffer when the sense amplifier senses the data. CONSTITUTION: A circuit for controlling signals of a semiconductor storage comprises a sense amplifier(1), a switching transistor(2), inverters(3,4), a latch circuit(5), an output buffer(6), a complementary-metal-oxide-semiconductor(CMOS) inverter(7), and a control input buffer(11). A switching transistor(13) configures a first switch. An inverter(8), a NOR circuit(9), an inverter(10) are connected with a gate of the switching transistor as circuits for transmitting a detecting signal ATD. An output signal of the inverter(8) and a signal(OE) inversing an output buffer control signal(OEB) to an inverter(102) are inputted in an input terminal of the NOR circuit. An inverter(12) inverses an output of the control input buffer. The buffer buffers an output control signal(/OE). Inverters(14,15) latch outputs of the switching transistor. A latch circuit(16) comprises a control input latch.
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