ELECTROPLATED INTERCONNECTION STRUCTURES ON INTEGRATED CIRCUIT CHIPS

摘要

PURPOSE: Electroplated interconnection structures on integrated circuit chips is provided to electroplate conductors of Cu such as interconnect wiring without leaving a seam or a void in the center of the conductor, and to electroplate conductors of Cu with substantially uniform filling thickness where the conductors have a difference in widths such as less than 1 micron and greater than 10 microns. CONSTITUTION: Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches.