| 摘要 |
PURPOSE: A method for manufacturing a dual gate of a semiconductor device is to prevent depletion of a gate of NMOS transistor without generating penetration to a gate of PMOS transistor, thereby improving operational reliability of the device. CONSTITUTION: A gate region is formed which is defined into a gate oxide layer(13), a n-doped polysilicon layer(14) and an undoped polysilicon layer(15) on the NMOS/PMOS regions of a semiconductor substrate(11). N-impurity region is formed in the NMOS transistor region after depositing the first photoresist on the PMOS transistor, thereby forming the first gate and source/drain region. P-impurity region is formed in the PMOS transistor region after removing the first photoresist and depositing the second photoresist on the NMOS transistor, thereby forming the second gate and source/drain region. The implanted N/P-impurities are diffused into the substrate by annealing after removing the second photoresist.
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