METHOD FOR CLEANING BROMIDE AFTER ETCHING PROCESS OF POLYSILICON LAYER

摘要

PURPOSE: A method for cleaning a bromide after an etching process of polysilicon layer is provided to reduce pollution and a corrosion of a chamber by Br ion when a dry etching process using a HBr gas. CONSTITUTION: A method for cleaning a bromide after an etching process of polysilicon layer comprises steps of placing a wafer(14) on a wafer stage(12) in an etching chamber(10), performing an etching process to pattern a polysilicon layer formed on the wafer, and supplying a gas including H radical to the chamber to remove a bromide remained in the chamber. In the method, the gas including H radical is H2N2 of 100 sccm to 500 sccm. The cleaning process is performed in a condition of a cathode power of 0W to 500W and an anode power of 500W to 1500W. The gas is supplied to the chamber for 10 to 20 seconds and then ionized by the cathode power.