| 摘要 |
PURPOSE: A method for manufacturing a mask is to improve alignment consistency between a front pattern and a rear pattern when manufacturing the mask using a cell projection electron beam exposure apparatus. CONSTITUTION: The first and second nitride films are deposited on an upper surface of a silicon film(13) and a lower surface of a substrate(11), respectively. After the first photoresist is deposited on the first nitride film, a mark on an upper alignment is exposed to form a photoresist pattern, and the exposed first nitride film is etched. The second nitride film is patterned to form the second photoresist, and the second nitride film is partially etched to form a lower surface pattern. The third photoresist is formed by a same process as the above process. After the third nitride film(16) is deposited on the selected surface of a wafer, the second nitride film is partially etched, and the substrate is etched to expose an oxide film. After the third nitride film, the remaining second nitride film, and the oxide film are etched to obtain an offset value between an upper surface and a lower surface on the basis of the upper surface alignment and the offset value is compensated, the remaining wafers are performed by the above processes.
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