A METHOD OF FABRICATING SEMICONDUCTOR MEMORY

摘要

PURPOSE: A method for fabricating a semiconductor device is to prevent a contact-not-open in forming a storage node contact hole and a metal contact hole, and improve a misalign margin between the storage node contact hole and the metal contact hole. CONSTITUTION: The first insulating layer(106) is formed on a semiconductor substrate(100) having a cell array region and a peripheral circuit region. A pad contact hole is formed by etching the first insulating layer. A conductive layer pad(110b) is formed by fill the pad contact hole with a conductive layer. The second insulating layer(112a) is formed on the first insulating layer. A bit line(114') is formed on the second insulating layer. After removing the second insulating layer except for the lower part of the bit line by an etch-back process, The third and fourth insulating layers(118, 120) are formed in this order on the entire surface of the semiconductor substrate. A storage node contact hole is formed at the cell array region by etching the third and fourth insulating layers. A metal contact hole is formed at the periphery circuit region by etching the fourth and third insulating layer and the first insulating layer.