METHOD FOR MANUFACTURING TRENCH ISOLATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a trench isolation of a semiconductor device is provided to prevent an oxygen from penetrating a sidewall of a trench, to prevent a hole from being formed in a trench isolation region, and to reduce a reverse narrow width effect. CONSTITUTION: A method for manufacturing a trench isolation of a semiconductor device comprises the steps of: sequentially forming first and second insulation layers on a semiconductor substrate of a first conductivity; defining an active region by etching the first and second insulation layers; etching the semiconductor substrate to a predetermined depth by using the second insulation layer as a mask, to form a trench; forming an oxynitride layer on the resultant structure to compensate for the damage to an etching caused by the trench; forming a third insulation layer on the oxynitride layer to the extent that the trench can be filled up; planarizing the surface of the third insulation layer by etching the third insulation layer; and eliminating the second insulation layer.