发明名称 |
APPARATUS FOR MANUFACTURING SEMICONDUCTOR HAVING HEATER FOR HEATING CHAMBER |
摘要 |
PURPOSE: An apparatus for manufacturing a semiconductor having a heater for heating a chamber is provided to form a thin film having a uniform thickness on a wafer, by partially controlling heat applied to the chamber according to the thickness of the thin film formed on the wafer. CONSTITUTION: An apparatus for manufacturing a semiconductor having a heater(300) for heating a chamber comprises the chamber, a gas-supplying element, a first heater, and a second heater. The chamber forms a predetermined film on a wafer. The gas-supplying element supplies a predetermined gas to the chamber from the exterior. The first heater heats a portion to which the gas supplying element of the chamber is connected. The second heater heats a rear portion of the portion heated by the first heater. The respective heaters include a plurality of coils for transforming at least one voltage to a heat.
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申请公布号 |
KR20000055729(A) |
申请公布日期 |
2000.09.15 |
申请号 |
KR19990004508 |
申请日期 |
1999.02.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HAK JAE;LEE, SU CHEOL |
分类号 |
H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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