| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to prevent a photoresist pattern from being collapsed by increasing adhesive strength between a substrate and the photoresist pattern. CONSTITUTION: If a substrate with a number of hydroxy ions existed on a surface thereof is executed by a hexamethyldisilazane(HMDS) prime process, a portion of the hydroxy ions reacts with Si contained in the HMDS to form an Si-O coupling. The Si-O functions as a role of increasing adhesive strength. At that time, since the primming process is carried out in a hot vacuum chamber, a by-product, amine, produced when carrying out the HMDS is removed, thereby satisfying a profile of a following photoresist pattern and increasing the stability of a post exposure delay. The substrate is executed by a tetramethyldisilazane(TMDS) prime process, so that the hydroxy ions remained on the substrate react with Si contained in the TMDS to form an Si-O coupling. And then, a photoresist is coated on the substrate.
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