| 摘要 |
PURPOSE: An EPROM(erasable programmable read only memory) transistor and a method for manufacturing thereof are to reduce a size of a chip and to prevent a leakage current from flowing through a semiconductor substrate. CONSTITUTION: A trench is formed on a portion of a substrate(21), and the first conductive source region(23) is formed adjacent to the trench of the substrate. The first insulating film(24) is inserted into the trench, and a floating gate(25) having the second insulating film(26) is formed on the first insulating film. The first conductive drain region(29) is formed to be contacted with a channel region(27) corresponding to one side of the floating gate. The third insulating film(31) is formed on the entire surface of the second insulating surface to cover the channel. drain, and drain regions. A control gate(33) is formed on the floating gate. Two EPROM transistors hold in common one source region, and the source region is formed in architecture with the channel region and drain region being sequentially layered.
|
