| 摘要 |
PURPOSE: An apparatus for heat-treating a plasma and a method forming a capacitor using the same are to provide charge with a motion component, thereby obtaining an isotropic plasma-treatment against a dielectric of the capacitor. CONSTITUTION: The apparatus comprises a body, a processing gas injection portion, and an exhaust portion. The body has an upper electrode(316) and a lower electrode(314). The lower electrode is formed on a semiconductor substrate(300). To cover the lower electrode, a dielectric(314) is formed. The semiconductor substrate with the dielectric is moved into the body. The heat treatment is carried out about 300 to 500 deg.C using the plasma. The processing gas is injected into the body, via the processing gas-injection portion. The processing gas is a mixture of an O2 and O3, and a mixture of O2 and N2. While the dielectric is heat-treated, the upper electrode is formed on the dielectric.
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