| 摘要 |
PURPOSE: A laser diode and a manufacturing method thereof are provided to enable to fabricate a semiconductor laser chip having a BTRS(Buried Twin-Ridge Substrate) structure by using a single crystal growing process. CONSTITUTION: In the laser diode, a two-step ridge strife is formed on the center of a p(+)-GaAs substrate(21) through photo-etching. A n(+)-AlzGa1-zAs having a ridge strife is formed on the upper part of the GaAs substrate(21). Then a U-shaped channel is formed through etching. Here, the etching is processed from the surface of the n(+)-AlzGa1-zAs to the certain depth of the GaAs substrate(21). After the etching, a p-AlyGa1-yAs clad layer(23), a p-AlxGa1-xAs active layer(24), an n-AlyGa1-yAs clad layer(25), and an n(+)-GaAs contact layer(26) are sequentially laminated through LPE(Liquid Phase Epitaxy) method.
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