| 摘要 |
PURPOSE: A method for fabricating a low-temperature interlayer dielectric using an electron beam is to cure a hydrogen silsesquioxane(HSQ) interlayer dielectric at a low temperature and simplify a manufacturing process of forming the HSQ interlayer dielectric. CONSTITUTION: The first insulating layer(104) is formed on a semiconductor substrate(100) with a substructure(102). An SOG(spin-on glass) layer(106) is coated on the first insulating layer. The second insulating layer(108) is formed on the SOG layer. The SOG layer is cured projecting an electron beam to the second insulating layer. The SOG layer is an HSQ. The substructure is a capacitor, whose dielectric layer is formed with one selected from the group consisting of ONO, Pb(Zr,Ti)O3, PbTiO3, (Pb,La)(Zr,Ti)O3, BaTiO3, (Ba,Sr)TiO3, Ta2O5 and SrTiO3. When the SOG layer is cured, a temperature of the semiconductor substrate is 20 deg.C to 500 deg.C.
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