发明名称 CHARGED PARTICLE BEAM EXPOSURE SYSTEM
摘要 PROBLEM TO BE SOLVED: To realize a charged particle beam exposure system which is provided with a blanking aperture array(BAA) to enable a fine beam which passes through an aperture to be much deflected with a small voltage. SOLUTION: A charged particle beam exposure system is equipped with a BAA, which is possessed of a beam source, apertures 26, and deflecting electrodes 24 provided at each aperture 24 confronting each other and is capable of turning on and off a charged particle beam that passes through the apertures or with on/off signals applied to the deflecting electrodes provided to the apertures, a deflecting means which deflects a charged particle beam that passes through the BAA, a focusing means which focuses a charged particle beam that passes through the BAA on a specimen, and an exposure control means which controls the signals applied to the electrodes of the apertures, where the BAA is equipped with laminated BAA boards 20A, 20B, 20p-20U, and apertures are provided to each of the BAA boards 20A, 20B, 20p-20U, and deflection electrodes are formed on one surfaces of the BAA board 20A, 20B, 20p-20U.
申请公布号 JP2000252198(A) 申请公布日期 2000.09.14
申请号 JP19990054124 申请日期 1999.03.02
申请人 ADVANTEST CORP 发明人 MARUYAMA SHIGERU;DAIKYO YOSHIHISA;SATO TAKAMASA;ARAI SOICHIRO;HASHIMOTO SHINICHI
分类号 H01J37/147;G03F7/20;H01J37/04;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01J37/147
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