METHOD AND APPARATUS FOR LASER HEAT TREATMENT, AND SEMICONDUCTOR DEVICE

摘要

A laser beam (102) of 350-800 nm wavelength generated by a pulsed laser (101) is shaped into a line beam (300) of width (W0) and length (L0). The resulting beam (300) is emitted onto a film material (201) of amorphous or polycrystalline silicon on a substrate (203) for a heat treatment.