发明名称 CO-PACKAGED MOS-GATED DEVICE AND CONTROL INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To suppress the parasitic inductance to a minimum and to reduce the size and the weight of a package by mounting the lower surface of a power transistor die to a substrate and mounting a control IC to the upper surface of the power transistor die using an insulating epoxy. SOLUTION: A package 20 forms an enclosure having an internal space 28 in accordance with a lower part 22A and an upper part 22B. A part of a terminal 24 forms a part of a lead frame 40 in the internal space 28. The lower surface of a transistor Q2 is electrically connected to a pad region of the lead frame 40 at the interface 42 using an electrically conductive epoxy. Further, a control IC 16 is mounted to the upper surface of the transistor Q2 at the interface 44 using an insulating epoxy. Then, it is connected to the terminal 24 with a bonding wire 26. Thus, the parasitic inductance can be suppressed to a minimum and the size and the weight of the package can be reduced.
申请公布号 JP2000252417(A) 申请公布日期 2000.09.14
申请号 JP19990049000 申请日期 1999.02.25
申请人 INTERNATL RECTIFIER CORP 发明人 ROBERT MARTINS;CHUAN CHIEA
分类号 H01L25/18;H01L25/04;H01L25/10;H01L25/11 主分类号 H01L25/18
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