| 摘要 |
PROBLEM TO BE SOLVED: To stop flow of electric current between adjoining insular semiconductor layers, and to ensure selective light emission of a plurality of light-emitting devices at any time, by removing thinly the surface except for the insular sections of a single crystalline substrate. SOLUTION: A one-conductivity semiconductor layer 2 is composed of a buffer layer 2a, an ohmic contact layer 2b, and an electron injected layer 2c. A reverse conductivity semiconductor layer 3 is composed of a light-emitting layer 3a, a second clad layer 3b, and a second ohmic contact layer 3c. The surface of a silicon substrate is thinly removed except for the insular sections of the semiconductor layers 2, 3. The depth of etching depends on forming conditions of the semiconductor layer 2 for a diffusion source of arsenic, but normally it is enough to remove the surface exceeding 500 A of the silicon substrate 1. As a result, electric current between adjoining insular semiconductor layers 2, 3 can be stopped, and a plurality of light-emitting devices can always emit light selectively, even if conductivity is improved due to diffusion of arsenic, or the like, on the surface 1b of the silicon substrate 1 at the initial stage of growth of the minus conductivity semiconductor layer 2. |
