| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of stably manufacturing the structure of a drift region in a power MOSFET. SOLUTION: In a manufacturing method a power MOSFET having, in a drift region, a columnar region group in which a columnar P-type region 15 and a columnar N-type region 16 are alternately arranged, and an N-type isolation region 17 formed adjacently to the outside of the columnar region group, P-type dopant of concentration turning to an N-type by heat treatment is added to the N-type isolation region 17, and then heat treatment is performed.
|
