| 摘要 |
PROBLEM TO BE SOLVED: To form a gate electrode with a laminated tungsten having a excellent form-controllability, without breaking a gate insulating film. SOLUTION: A polysilicon film 3, reaction barrier film 4 of tungsten nitride, tungsten film 5, and offset film 6 of silicon nitride are sequentially formed on a gate insulating film 2. Then the offset film 6 is etched with a photoresist as a mask. Then with the offset film 6 as a mask, the tungsten film 5 is etched. Here, a mixed gas comprising fluorine group gas, chlorine, oxygen, and nitrogen is used as an etching gas.
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