| 摘要 |
PROBLEM TO BE SOLVED: To carry out etching at a sufficient speed suitable for a manufacturing process, and to complete etching without forming a byproduct on an etching side wall by using gas containing hydrogen iodide, and by etching a platinum thin film under specific pressure conditions. SOLUTION: Gas containing hydrogen iodide is used, and a platinum thin film is subjected to etching under a pressure condition of 100 Pa or less but 0.05 Pa or more. In this case, an inert gas selected from helium, argon, or the like, a hydrogen gas, a nitrogen gas, a gas containing a fluorine element in the molecular structure, a hydrogen gas that is a gas containing a chlorine gas in the molecular structure and is other than the hydrogen iodine gas, a nitrogen gas, a gas containing the fluorine element in the molecular structure, and a gas containing the nitrogen atom in the molecular structure are contained as an addition gas. The addition gas is set to 50% or less for the hydrogen iodide gas by volume conversion in a standard state. A dry etching device using a capacitive high-frequency power supply of a parallel flat plate is used.
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