METHOD FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICE

摘要

A method for producing a semiconductor device having a crystalline semiconductor film which contains silicon as a main component, is formed on a substrate, and serves as an active layer, comprising a substrate protective film forming step at which a silicon oxide film to serve as a substrate protective film is formed on the substrate, a first step at which a semiconductor film containing silicon as a main component is formed on the substrate protective film, and a second step at which a pulse laser beam is applied to the semiconductor film, wherein the wavelength of the pulse laser beam ranges from 370 nm to 710 nm. Such a thin film semiconductor device has a high performance and is simply and stably produced through a low-temperature process.