| 摘要 |
PROBLEM TO BE SOLVED: To enable an electrode connection between the upper and lower surfaces of a semiconductor device by making a metal pass a through-hole from the top surface to the bottom surface of the semiconductor device. SOLUTION: A through-hole 7 is formed in the substrate 1 of a semiconductor device 1 beforehand. A passivation film 3 of SiN, SiON, SiO2, or PSG etc., is applied onto the top surface of the substrate 1, on which an Al electrode 2 is formed, the sidewall of the through-hole 7, and the bottom surface of the substrate 1. Then, a seed layer 4, in which a TiW alloy layer for improving the adhesion to the base and an electroplating power feeding layer of Au, Pt etc., are laminated, is formed on the whole region of the substrate 1 by electroless plating. Then, a photoresist 5 is applied except the region where bump plating is to be carried out. Further, a metal for a bump is thickly plated by electroplating. Then, the photoresist 5 is removed and continuously the seed layer 4 on the top surface is removed to obtain a semiconductor device wherein a bump 6 is formed at the through-hole 7. |
