| 摘要 |
PROBLEM TO BE SOLVED: To obtain a GaN substrate in which crystal defect is suppressed by growing a second nitride semiconductor and removing at least up to a different kind of substrate and then growing a third nitride semiconductor on the second nitride semiconductor thereby suppressing warp during production. SOLUTION: A second nitride semiconductor 3 is grown by HVPE on a first epitaxially grown nitride semiconductor layer 2. It is then polished from the side where a different kind of substrate 1 is exposed thus removing the second nitride semiconductor 3 at least up to the different kind of substrate 1. When the different kind of substrate 1 is removed by polishing, stress dependent on the different kind of substrate will depend on the nitride semiconductor and a significantly warped nitride semiconductor is obtained at the stage where the different kind of substrate 1 is removed entirely. Subsequently, a third nitride semiconductor 4 is grown on the nitride semiconductor by HVPE. When a thick film of third nitride semiconductor 4 is formed by HVPE, a GaN substrate where warp is suppressed can be obtained. |
