| 摘要 |
A solar cell has a p-type light absorption layer and a cadmium-free n-type layer of larger bandgap and similar electron affinity or of a specified ZnO-based semiconductor. A solar cell has a p-n junction comprising a Cd-free n-type semiconductor layer which has a larger bandgap and a 0 to less than 0.5 eV smaller electron affinity than a p-type light absorption semiconductor layer. An Independent claim is also included for a solar cell with an n-type semiconductor layer which is located above a p-type light absorption layer and which is based on an oxide of formula Zn1-zCzO, where C = one or more of Be, Mg, Ca, Sr and Ba and z = 0 to 1 exclusive. Preferred Features: In the first cell, the n-type layer is based on Zn1-xAxO or Zn1-yByO, where A = one or more of Be, Mg, Ca, Sr and Ba, B = one or more of Al, Ga and In, x = 0 to 1 exclusive and y = 0 to 1 exclusive.
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