| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film having uniform thickness and quality, especially a crystalline silicon thin film, on a large area substrate to be processed by introducing a reaction gas into a hollow second electrode having a plurality of grooves formed radially or in grid-shape from the center toward the circumferential part. SOLUTION: A plurality of, e.g. four, grooves 8 having substantially circular cross-section are formed radially in the facing plane 6 of a second electrode 5 from the center of the facing plane 6 toward the peripheral part thereof. A substrate 10 is mounted on the heater block 4 of a first electrode 3 in a reaction container 1 through a valve and heated up to a desired temperature by means of the heater block 4. A reaction gas is then introduced through an introduction pipe 9 into the hollow second electrode 5 and blown out from a large number of gas blow-out holes 7 in the facing plane 6 toward the substrate 10 on the first electrode 3. At the same time, gas in the reaction container 1 is exhausted through exhaust pipes 2, 2 by driving an exhauster, e.g. a vacuum pump, and a specified degree of vacuum is held in the reaction container 1. |
