发明名称 THIN-FILM CAPACITOR
摘要 PROBLEM TO BE SOLVED: To suppress increase of leakage electrodes even when an SRO film is used as an electrode material, for improved yield and reliability. SOLUTION: A laminating structure is formed wherein, on an Si substrate 30, a ferroelectric film 33 whose main component is PZT is sandwiched between SRO(SrRuO3) electrodes 32 and 35 through a thermally-oxidized SiO2 film 31. Here, the ratio A/B between mol number A of Pb and mol number B of Zr and Ti of PZT (Pb(Zn, Ti)O3) constituting the ferroelectric film 33 is set to be A/B=1.1.
申请公布号 JP2000252444(A) 申请公布日期 2000.09.14
申请号 JP19990056882 申请日期 1999.03.04
申请人 TOSHIBA CORP 发明人 KANAI HIDEYUKI;YAMASHITA YOHACHI;YAMAKAWA KOJI;ARISUMI OSAMU;NAKAMURA SHINICHI
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 主分类号 H01L27/04
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