| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon thin-film photoelectric conversion device where the scattering of photoelectric conversion characteristics is reduced. SOLUTION: In a silicon thin-film photoelectric conversion device with a transparent electrode 10, a silicon thin-film photoelectric conversion unit 11, and a reverse-side electrode 12 containing a light reflection metal electrode 122, the transparent electrode 10 is in double-layer structure where first and second transparent conductive films 101 and 102 are laminated from the substrate side, the first transparent conductive film 101 has an average elevation difference in surface unevenness of 100-1,000 nm, the second transparent conductive film 102 has an average film thickness of 50-500 nm, and the average elevation difference in the surface unevenness is smaller than that of the first transparent conductive film 101.</p> |
