| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and method for semiconductor wafers capable of increasing a time for processing substrates at a desired treat ment temperature, by accurately estimating the temperature of a holding plate surface and thus quickly heating the holding plate surface to the desired treat ment temperature. SOLUTION: A heating element 33 is arranged on the underside of a holding plate 32, so that substrates placed on the front surface of the plate 32 are heated. The plate 32 has a bottomed hole 34 formed to extend from the underside to the front surface. A first temperature sensor 39 and a second temperature sensor 40 are arranged at heights different from each other in the hole 34. A control section estimates the temperature of the plate 32, based on inspection results obtained by the sensors 39 and 40 and controls thermal energy to be supplied to the plate 32 based on the estimated temperature, whereby the heat treatment temperature for the substrates on the plate 32 is controlled.
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