| 摘要 |
PROBLEM TO BE SOLVED: To simplify processes, improve coverage of a barrier layer, and form an excellent copper wiring by making deposition of a Cu seed layer as a preceding process unnecessary when a damascene copper wiring of a semiconductor device is formed by plating. SOLUTION: In this manufacturing method, a barrier layer 8 composed of a tungsten (W) film is formed by using CVD on an insulating film 4 constituted of a silicon oxide film on which surface a trench 6 for a wiring is formed. The surface of the barrier layer 8 is irradiated with ammonia gas or ammonia plasma or nitrogen plasma and subjected to nitrogen treatment, and a nitride layer 10 composed of tungsten nitride is formed. A copper (Cu) film 12 is deposited on the nitride layer 10 by plating, and a wiring 14 containing a Cu film 12 is formed in the trench 6.
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