SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that suppresses overflow of electrons and has an active layer with excellent crystallizability. SOLUTION: A semiconductor laser device is provided with an n-type InP substrate 101, a p-type InP clad layer 106 and an n-type InP clad layer 102 formed on the n-type InP substrate 101, and an active layer 104 that is formed between the n-type InP clad layer 106 and the n-type InP clad layer 102 and where an InGaAsP barrier layer 109 and an InGaAsP well layer 108 are alternately formed at least by two layers. The absolute value of the amount of band offset of the conduction band between the adjacent InGaAs barrier layer 109 and the InGaAs well layer 108 is increased toward the p-type InP clad layer 106.